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Eximpedia analyzes Changzhou Monocrystal Optoelectronic Co Limited export and import records, including data from 1 buyers and 1 suppliers. We provide an intelligence report of Changzhou Monocrystal Optoelectronic Co Limited that covers trade statistics, shipment values, quantities, exporters & importers and trade destinations
Changzhou Monocrystal Optoelectronic Co Limited import markets
Explore the Changzhou Monocrystal Optoelectronic Co Limited import market with monthly import values, major importers, HS Codes, key ports, top suppliers, and competitors
HS CODE | USD VALUE | SHIPMENTS | % |
---|---|---|---|
3818009000 | 1.36 | 11 | 11.46 |
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELECTRONICS | |||
2818101100 | 0.69 | 8 | 8.33 |
ARTIFICIAL CORUNDUM, WHETHER OR NOT CHEMICALLY DEFINED; ALUMINIUM OXIDE; ALUMINIUM HYDROXIDE | |||
8101991000 | 0.57 | 5 | 5.21 |
TUNGSTEN (WOLFRAM) AND ARTICLES THEREOF, INCLUDING WASTE AND SCRAP | |||
8102950000 | 0.29 | 6 | 6.25 |
MOLYBDENUM AND ARTICLES THEREOF, INCLUDING WASTE AND SCRAP | |||
6903100000 | 0.17 | 5 | 5.21 |
OTHER REFRACTORY CERAMIC GOODS (FOR EXAMPLE, RETORTS, CRUCIBLES, MUFFLES, NOZZLES, PLUGS, SUPPORTS, CUPELS, TUBES, PIPES, SHEATHS AND RODS), OTHER THAN THOSE OF SILICEOUS FOSSIL MEALS OR OF SIMILAR SILICEOUS EARTHS |
COUNTRY | USD VALUE | SHIPMENTS | % |
---|---|---|---|
CHINA | 3.36 | 76 | 79.17 |
JAPAN | 0.06 | 6 | 6.25 |
GERMANY | 0.03 | 3 | 3.12 |
UNITED STATES | 0.01 | 6 | 6.25 |
KOREA, REPUBLIC OF | 0.01 | 4 | 4.17 |
PORT NAME | USD VALUE | SHIPMENTS | % |
---|---|---|---|
CHANGZHOU | 1.85 | 62 | 64.58 |
NANJING | 0.13 | 12 | 12.50 |
HANDAN | 0.68 | 6 | 6.25 |
XIAMEN | 0.42 | 4 | 4.17 |
LUOYANG | 0.15 | 3 | 3.12 |
COMPANY | USD VALUE | SHIPMENTS |
---|---|---|
MONOCRYSTAL LLC | 2.73 | 235 |
HT FELLOW ENERGY JOINT STOCK COMPANY | 5.63 | 1 |
FELLOW ENERGY ANONYMOUS COMPANY | 6.90 | 12 |
FELLOW ENERGY JOINT STOCK COMPANY | 25.11 | 41 |
HT FELLOW ENERJI ANONIM SIRKETI | 114.56 | 211 |
COMPANY | USD VALUE | SHIPMENTS |
---|---|---|
LOTOS COMPANY LIMITED C O SD INDUSTRIAL COMPANY LIMITED | 0.84 | 2 |
JIANGYIN JINGYING PHOTOVOLTAIC MATERIALS CO LIMITED | 1.10 | 2 |
CHANGZHOU MONOCRYSTAL OPTOELECTRONIC CO LIMITED | 2.73 | 96 |
TSUN ENERGY INVESTMENT COMPANY LIMITED | 150.02 | 37 |
If you are looking to establish relationship with Changzhou Monocrystal Optoelectronic Co Limited Automation you can save time by getting access to the key decision makers and get a detailed report.
Discover the Changzhou Monocrystal Optoelectronic Co Limited with product description, import values, quantities, exporter name, country of origin and key destinations.
HSN Code | Product Description | Imports | Exporter | Origin | Destination | Qty. |
---|---|---|---|---|---|---|
8209008000 | CERAMIC METAL CARBIDE PLATE TDC 2 K10. DESIGNED FOR INSTALLATION IN A DIAMOND POLISHING MACHINE. USED FOR CUTTING GROOVES ON A COPPER POLISHER | KOREA, REPUBLIC OF | RUSSIA | 0 | ||
8481209009 | VALVE TA0400-30EPS-G-15A: IS A 3-PART BALL VALVE CONSISTED OF INDICATOR (1), PNEUMATIC ACTUATOR (2) AND BALL VALVE (3): NON-RETURN, NON-RELIEF, INDI CATOR SHOWS THE POSITION | KOREA, REPUBLIC OF | RUSSIA | 0 | ||
3919900000 | PROTECTIVE FILM UCF-MP2 40 MKM (THICKNESS) X 1000 (WIDTH) MM. SELF-ADHESIVE, COMPOSITION POLYETHYLENE CAS 9002-88-4 <=85, PROPYLENE-ETHYLENE COPOLYMER CAS 9010-79-1<=15. THE FILM WILL BE USED AS A PROTECTIVE MATERIAL FOR OPTOELECTRONICS PRODUCTS, FOR | KOREA, REPUBLIC OF | RUSSIA | 0 | ||
3506990000 | TWO-COMPONENT EPOXY ADHESIVE BRAND DL712. CONSISTS OF TWO COMPONENTS: DL-712A (COMPONENT A - WHITE PASTE) AND DL-712B (COMPONENT B - RED LIQUID). PACKED IN PACKAGES OF 1 KG EACH. COMPONENTS A AND B ARE MIXED IN PROPORTIONS | CHINA | RUSSIA | 0 | ||
3907299009 | PKHB RESIN (BISPHENOL-A-(EPICHLOROHYDRIN)CAS: 26402-79-9)-99%. IS A TRANSPARENT SOLID SPHERICAL POLYMER, WHICH IS A POLYESTER. USED IN THE PRODUCTION OF SILVER-CONTAINING POLYMER PASTES. WHICH ARE INTENDED FOR THE MANUFACTURE OF A CONTACT SYSTEM ON THE FRONT AND REAR SIDE OF SILICON SOLAR CELLS USING THE SCREEN PRINTING METHOD. DOES NOT CONTAIN ETHYL ALCOHOL. DOES NOT APPLY TO FOOD ADDITIVES, FLAVORS OR TECHNOLOGICAL AUXILIARY PRODUCTS | UNITED STATES | RUSSIA | 0 | ||
3907299009 | PKHB RESIN (BISPHENOL-A-(EPICHLOROHYDRIN)CAS: 26402-79-9)-99%. IS A TRANSPARENT SOLID SPHERICAL POLYMER, WHICH IS A POLYESTER. USED IN THE PRODUCTION OF SILVER-CONTAINING POLYMER PASTES. WHICH ARE INTENDED FOR THE MANUFACTURE OF A CONTACT SYSTEM ON THE FRONT AND REAR SIDE OF SILICON SOLAR CELLS USING THE SCREEN PRINTING METHOD. DOES NOT CONTAIN ETHYL ALCOHOL. DOES NOT APPLY TO FOOD ADDITIVES, FLAVORS OR TECHNOLOGICAL AUXILIARY PRODUCTS | UNITED STATES | RUSSIA | 0 | ||
8516808000 | ELECTRIC HEATER (HEATING ELEMENT) MOLYBDENUM DISILICIDE (MOSI2), TYPE U 6/12/710/250/50. COMPOSITION: MOLYBDENUM - 60%. SILICON - 37%, OTHER IMPURITIES - 3%. USED IN A HIGH TEMPERATURE OVEN WITH FIBER INSULATION NABERTHERM HT 450/17 TO HEAT THE OVEN CHAMBER UP TO 1700? WHEN ANNEALING PLATES FROM SYNTHETIC CORUNDER. PRODUCTION METHOD: 1. SINTERING MOLYBDENUM POWDER AND SILICON POWDER INTO LARGE PIECES IN A HIGH TEMPERATURE FURNACE. 2. GRINDING SPECKS IN A BALL MILL. 3. ADDING AN ADHESIVE COMPOSITION AND FORMING RODS OF DIFFERENT DIAMETERS USING THE EXTRUSION METHOD ON A HYDRAULIC PRESS.4. GIVING THE ROD A U-SHAP. 5. FORMATION OF A HEATING ELEMENT BY WELDING THE HEATED PART AND COLD TERMS AND SUBSEQUENTLY APPLYING A LAYER OF ALUMINUM ON BOTH TERMS. 7. CHECKING THE FINAL PRODUCT, TRANSFER FOR STORAGE. ELECTRICAL CHARACTERISTICS: VOLTAGE - 14.5V; POWER - 4130W | CHINA | RUSSIA | 12 | ||
3907299009 | PKHB RESIN (BISPHENOL-A-(EPICHLOROHYDRIN)CAS: 26402-79-9)-99%. IS A TRANSPARENT SOLID SPHERICAL POLYMER, WHICH IS A POLYESTER. USED IN THE PRODUCTION OF SILVER-CONTAINING POLYMER PASTES. WHICH ARE INTENDED FOR THE MANUFACTURE OF A CONTACT SYSTEM ON THE FRONT AND REAR SIDE OF SILICON SOLAR CELLS USING THE SCREEN PRINTING METHOD. DOES NOT CONTAIN ETHYL ALCOHOL. DOES NOT APPLY TO FOOD ADDITIVES, FLAVORS OR TECHNOLOGICAL AUXILIARY PRODUCTS | UNITED STATES | RUSSIA | 0 | ||
8516808000 | ELECTRIC HEATER (HEATING ELEMENT) MOLYBDENUM DISILICIDE (MOSI2), TYPE U 6/12/710/250/50. COMPOSITION: MOLYBDENUM - 60%. SILICON - 37%, OTHER IMPURITIES - 3%. USED IN A HIGH TEMPERATURE OVEN WITH FIBER INSULATION NABERTHERM HT 450/17 TO HEAT THE OVEN CHAMBER UP TO 1700? WHEN ANNEALING PLATES FROM SYNTHETIC CORUNDER. PRODUCTION METHOD: 1. SINTERING MOLYBDENUM POWDER AND SILICON POWDER INTO LARGE PIECES IN A HIGH TEMPERATURE FURNACE. 2. GRINDING SPECKS IN A BALL MILL. 3. ADDING AN ADHESIVE COMPOSITION AND FORMING RODS OF DIFFERENT DIAMETERS USING THE EXTRUSION METHOD ON A HYDRAULIC PRESS.4. GIVING THE ROD A U-SHAP. 5. FORMATION OF A HEATING ELEMENT BY WELDING THE HEATED PART AND COLD TERMS AND SUBSEQUENTLY APPLYING A LAYER OF ALUMINUM ON BOTH TERMS. 7. CHECKING THE FINAL PRODUCT, TRANSFER FOR STORAGE. ELECTRICAL CHARACTERISTICS: VOLTAGE - 14.5V; POWER - 4130W | CHINA | RUSSIA | 12 | ||
8516808000 | ELECTRIC HEATER (HEATING ELEMENT) MOLYBDENUM DISILICIDE (MOSI2), TYPE U 6/12/710/250/50. COMPOSITION: MOLYBDENUM - 60%. SILICON - 37%, OTHER IMPURITIES - 3%. USED IN A HIGH TEMPERATURE OVEN WITH FIBER INSULATION NABERTHERM HT 450/17 TO HEAT THE OVEN CHAMBER UP TO 1700? WHEN ANNEALING PLATES FROM SYNTHETIC CORUNDER. PRODUCTION METHOD: 1. SINTERING MOLYBDENUM POWDER AND SILICON POWDER INTO LARGE PIECES IN A HIGH TEMPERATURE FURNACE. 2. GRINDING SPECKS IN A BALL MILL. 3. ADDING AN ADHESIVE COMPOSITION AND FORMING RODS OF DIFFERENT DIAMETERS USING THE EXTRUSION METHOD ON A HYDRAULIC PRESS.4. GIVING THE ROD A U-SHAP. 5. FORMATION OF A HEATING ELEMENT BY WELDING THE HEATED PART AND COLD TERMS AND SUBSEQUENTLY APPLYING A LAYER OF ALUMINUM ON BOTH TERMS. 7. CHECKING THE FINAL PRODUCT, TRANSFER FOR STORAGE. ELECTRICAL CHARACTERISTICS: VOLTAGE - 14.5V; POWER - 4130W | CHINA | RUSSIA | 12 | ||
3907299009 | PKHB RESIN (BISPHENOL-A-(EPICHLOROHYDRIN)CAS: 26402-79-9)-99%. IS A TRANSPARENT SOLID SPHERICAL POLYMER, WHICH IS A POLYESTER. USED IN THE PRODUCTION OF SILVER-CONTAINING POLYMER PASTES. WHICH ARE INTENDED FOR THE MANUFACTURE OF A CONTACT SYSTEM ON THE FRONT AND REAR SIDE OF SILICON SOLAR CELLS USING THE SCREEN PRINTING METHOD. DOES NOT CONTAIN ETHYL ALCOHOL. DOES NOT APPLY TO FOOD ADDITIVES, FLAVORS OR TECHNOLOGICAL AUXILIARY PRODUCTS | UNITED STATES | RUSSIA | 0 | ||
8516808000 | ELECTRIC HEATER (HEATING ELEMENT) MOLYBDENUM DISILICIDE (MOSI2), TYPE U 6/12/710/250/50. COMPOSITION: MOLYBDENUM - 60%. SILICON - 37%, OTHER IMPURITIES - 3%. USED IN A HIGH TEMPERATURE OVEN WITH FIBER INSULATION NABERTHERM HT 450/17 TO HEAT THE OVEN CHAMBER UP TO 1700? WHEN ANNEALING PLATES FROM SYNTHETIC CORUNDER. PRODUCTION METHOD: 1. SINTERING MOLYBDENUM POWDER AND SILICON POWDER INTO LARGE PIECES IN A HIGH TEMPERATURE FURNACE. 2. GRINDING SPECKS IN A BALL MILL. 3. ADDING AN ADHESIVE COMPOSITION AND FORMING RODS OF DIFFERENT DIAMETERS USING THE EXTRUSION METHOD ON A HYDRAULIC PRESS.4. GIVING THE ROD A U-SHAP. 5. FORMATION OF A HEATING ELEMENT BY WELDING THE HEATED PART AND COLD TERMS AND SUBSEQUENTLY APPLYING A LAYER OF ALUMINUM ON BOTH TERMS. 7. CHECKING THE FINAL PRODUCT, TRANSFER FOR STORAGE. ELECTRICAL CHARACTERISTICS: VOLTAGE - 14.5V; POWER - 4130W | CHINA | RUSSIA | 12 | ||
8101991000 | TUNGSTEN ROD WITH TUNGSTEN CONTENT OF NOT LESS THAN 99.95%. MAIN PRODUCTION PROCESSES: TUNGSTEN POWDER - ISOSTATIC PRESSING - SINTERING - INITIAL MELTING - ROLLING, USED FOR THE MANUFACTURE OF HEATER FOR ROSTOVYKHUSTANOV | CHINA | RUSSIA | 0 | ||
8501101009 | LSA561S20-B-TSCA-152-E1000 KIT CONSISTS OF AN ACTUATOR AND ENCODER CONNECTED TOGETHER. THE ACTUATOR IS A 2-PHASE, SYNCHRONOUS, AC/DC STEPPER MOTOR WITH A SHAFT-INTEGRATED SCREW, THE ENCODER IS A FULL ROTARY OPTICAL ENCODER IN A MOLDED POLYCARBONATE CASE, THE TOR USES A 5-PIN OR STANDARD CONNECTOR. ACTUATOR OUTPUT POWER: NO MORE THAN 12W. SERVES FOR LINEAR MOVEMENT OF THE WORKING TOOL DUE TO THE ROTATION OF THE SCREW ON THE AUTOMATED AUTOMATIC POSITIONING DEVICE. THE ENCODER PROVIDES AN ELECTRICAL PULSE SIGNAL TO THE STEPPER MOTOR DRIVER PROPORTIONAL TO THE CHANGE IN THE ANGLE OF THE WORKING TOOL AND IS INTENDED TO INDICATE THE DIRECTION OF MOVEMENT AND/OR ANGULAR MOVEMENT OF THE EXTERNAL MECHANISM. THE ENCODER FORMES PULSES, THE NUMBER OF WHICH CORRESPONDS TO THE ROTATION OF THE SHAFT BY A CERTAIN ANGLE | CHINA | RUSSIA | 5 | ||
3926909709 | CARTRIDGE 50 ML. CONSISTS OF: COVER, PLUNGER AND CARTRIDGE. MATERIAL - POLYPROPYLENE. USED FOR STORING AND SUPPLYING TWO-COMPONENT GLUE. THE CARTRIDGE IS SUPPLIED EMPTY. THE CARTRIDGE IS FILLED WITH TWO-COMPONENT GLUE THROUGH 2 HOLES FROM THE BOTTOM | CHINA | RUSSIA | 0 | ||
7616991008 | LIFTING MECHANISM BASE 0711A2. IT IS A SPECIAL-HAULED ALUMINUM PIECE WITH FIVE THROUGH AND SIX MOUNTING HOLES. PRODUCTION METHOD: CASTING, MILLING, GRINDING. DESIGNED FOR INSTALLING SUPPORT BEARINGS AND | JAPAN | RUSSIA | 0 | ||
3818009000 | SEED SIC.TYPE: 4H-N, DIAMETER: 153+0.5 MM, THICKNESS: 600+50 µM. COMPOSITION SI | CHINA | RUSSIA | 0 | ||
3818009000 | PROCESSED SILICON CARBIDE (SIC) CRYSTAL. TYPE: 4H, DIAMETER:153 | CHINA | RUSSIA | 0 | ||
6903100000 | INSULATING PARTS OF THE THERMAL REACTOR FROM SOLID GRAPHITE FELT | CHINA | RUSSIA | 0 | ||
3818009000 | PROCESSED SILICON CARBIDE (SIC) CRYSTAL. TYPE: 4H. THICKNESS: 10-2 | CHINA | RUSSIA | 0 |
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Changzhou Monocrystal Optoelectronic Co Limited export markets
Explore the RUSSIA export market with monthly export values, major importers, HS Codes, key ports, top suppliers, and competitors
HS CODE | USD VALUE | SHIPMENTS | % |
---|---|---|---|
7104990003 | 0.17 | 15 | 88.24 |
SYNTHETIC OR RECONSTRUCTED PRECIOUS OR SEMIPRECIOUS STONES, WHETHER OR NOT WORKED OR GRADED BUT NOT STRUNG, MOUNTED OR SET; UNGRADED SYNTHETIC OR RECONSTRUCTED PRECIOUS OR SEMI-PRECIOUS STONES, TEMPORARILY STRUNG FOR CONVENIENCE OF TRANSPORT | |||
3818009000 | 0.00 | 2 | 11.76 |
CHEMICAL ELEMENTS DOPED FOR USE IN ELECTRONICS, IN THE FORM OF DISCS, WAFERS OR SIMILAR FORMS; CHEMICAL COMPOUNDS DOPED FOR USE IN ELECTRONICS |
COUNTRY | USD VALUE | SHIPMENTS | % |
---|---|---|---|
CHINA | 0.17 | 17 | 100.00 |
PORTS | USD VALUE | SHIPMENTS | % |
---|---|---|---|
CHANGZHOU | 0.17 | 16 | 94.12 |
HUIZHOU | 0.00 | 1 | 5.88 |
COMPANY | USD VALUE | SHIPMENTS |
---|---|---|
LLP ELEКTRONSTANDART PRIBOR КAZAHSTAN | 0.00 | 32 |
LLC MONOCRYSTAL | 32.82 | 322 |
COMPANY | USD VALUE | SHIPMENTS |
---|---|---|
SUN YIN CRYSTAL IND CO LIMITED | 1.01 | 5 |
QINGDAO GOLDEN STAR ELECTRONICS TECHNOLOGY CO LIMITED | 1.14 | 30 |
JIANGSU LILONG SEMICONDUCTOR TECH CO LIMITED | 6.02 | 85 |
SINOPATT TECHNOLOGY CO LIMITED | 7.28 | 70 |
ZHEJIANG CRYSTAL OPTECH CO LIMITED | 13.64 | 149 |
If you are looking to establish relationship with Changzhou Monocrystal Optoelectronic Co Limited Automation you can save time by getting access to the key decision makers and get a detailed report.
Discover the Changzhou Monocrystal Optoelectronic Co Limited with product description, import values, quantities, exporter name, country of origin and key destinations.
HSN Code | Product Description | Imports | Exporter | Origin | Destination | Qty. |
---|---|---|---|---|---|---|
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF THE PRODUCT DEPENDS ON THE DIAMETER AND TOTAL LENGTH. DESIGNED FOR THE MANUFACTURE OF OPTICAL PARTS AND OTHER APPLICATIONS (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF PRODUCTS DEPENDS ON THE DIAMETER AND THICKNESS. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY | RUSSIA | CHINA | 1038580 | ||
7104990003 | PRODUCTS FROM MONOCRYSTAL SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF PRODUCTS DEPENDS ON THE DIAMETER AND THICKNESS. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY | RUSSIA | CHINA | 162270 | ||
7104990003 | PLATES FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%, SURFACE TREATMENT - POLISHED. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH CONTENTS | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH CONTENTS | RUSSIA | CHINA | 0 | ||
3818009000 | SILICON CARBIDE FRAGMENTS. THEY ARE FRAGMENTS OF IRREGULAR GEOMETRICAL SHAPE (SHAPLESS) FROM PLATES AND BLANKS. THE PROCESSING OPERATIONS (GRINDING, POLISHING), WHICH HAVE DIFFERENT TYPES OF DEFECTS OBTAINED AS A RESULT OF FAILURES OF EQUIPMENT AND INTEGRITY AND SAFETY WHEN MOVING BETWEEN PRODUCTION OPERATIONS). SURFACE TREATMENT: POLISHING, AFTER CUTTING, GRINDING, EPITAXIAL LAYER: NONE. INTENDED FOR USE IN SEMICONDUCTOR EQUIPMENT. SILICON CARBIDE CONTENT: NOT LESS THAN 99.99%. CHEMICAL FORMULA: SIC, CAS NO. 409-21-2. PRODUCTION METHOD: SIC CRYSTAL IS PRODUCED BY PVT (PHYSICAL VAPOR DEPOSITION) METHOD. POLYTYPE: 4H, 6H, 15R. ALLOYING AGENT: N(NITROGEN). NITROGEN CONCENTRATION IS EQUIVALENT TO 0.001-0.01% IN THE TOTAL VOLUME IN ORDER TO ACHIEVE THE SPECIFIC RESISTIVITY OF THE MATERIAL AT A LEVEL OF 10 MΩ*CM - 10 Ω*CM (AT ROOM TEMPERATURE 20 DEGREES CELSIUS) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF THE PRODUCT DEPENDS ON THE DIAMETER AND TOTAL LENGTH, INTENDED FOR THE MANUFACTURE OF OPTICAL PARTS AND OTHER APPLICATIONS (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF PRODUCTS DEPENDS ON THE DIAMETER AND THICKNESS. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY | RUSSIA | CHINA | 2526850 | ||
3818009000 | SILICON CARBIDE FRAGMENTS. THEY ARE FRAGMENTS OF IRREGULAR GEOMETRICAL SHAPE (SHAPLESS) FROM PLATES AND WORKPIECES THAT HAVE PASSED PROCESSING OPERATIONS (GRINDING, POLISHING), HAVING DIFFERENT TYPES OF DEFECTS OBTAINED AS A RESULT OF EQUIPMENT FAILURES AND HUMAN FAILURES ACTOR (FAILURE TO ENSURE INTEGRITY AND SAFETY WHEN MOVEMENT BETWEEN PRODUCTION OPERATIONS). SURFACE TREATMENT: POLISHING, AFTER CUTTING, GRINDING, EPITAXIAL LAYER: NONE. INTENDED FOR USE IN SEMICONDUCTOR EQUIPMENT. SILICON CARBIDE CONTENT: NOT LESS THAN 99.99%. CHEMICAL FORMULA: SIC, CAS NO. 409-21-2. PRODUCTION METHOD: SIC CRYSTAL IS PRODUCED BY PVT (PHYSICAL VAPOR DEPOSITION) METHOD. POLYTYPE: 4H, 6H, 15R. ALLOYING AGENT: N(NITROGEN). NITROGEN CONCENTRATION IS EQUIVALENT TO 0.001-0.01% IN THE TOTAL VOLUME IN ORDER TO ACHIEVE THE SPECIFIC RESISTIVITY OF THE MATERIAL AT A LEVEL OF 10 MΩ*CM - 10 Ω*CM (AT ROOM TEMPERATURE 20 DEGREES CELSIUS) | RUSSIA | CHINA | 0 | ||
7104990003 | PLATES FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. SURFACE TREATMENT - POLISHED. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF THE PRODUCT DEPENDS ON THE DIAMETER AND TOTAL LENGTH. DESIGNED FOR THE MANUFACTURE OF OPTICAL PARTS AND OTHER APPLICATIONS (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | BLANKS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. SURFACE TREATMENT - GRINDED. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF THE PRODUCTS DEPENDS ON THE DIAMETER AND THICKNESS. DESIGNED FOR APPLICATION OF A SEMICONDUCTOR LAYER | RUSSIA | CHINA | 152395 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF PRODUCTS DEPENDS ON THE DIAMETER AND THICKNESS. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER | RUSSIA | CHINA | 143575 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. THE FORM OF THE PRODUCT DEPENDS ON THE DIAMETER AND TOTAL LENGTH. DESIGNED FOR THE MANUFACTURE OF OPTICAL PARTS AND OTHER APPLICATIONS (CLAUSE 2.19) | RUSSIA | CHINA | 0 | ||
7104990003 | PRODUCTS FROM MONOCRYSTALLINE SYNTHETIC CORUNDUM WITH AN ALUMINUM OXIDE CONTENT OF NOT LESS THAN 99.99%. DESIGNED FOR APPLICATION OF SEMICONDUCTOR LAYER AND USED IN ELECTRONICS AND LED INDUSTRY (CLAUSE 2.20) | RUSSIA | CHINA | 6190 |
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